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| General Purpose Transistor SMD Diodes Specialist MMBT3904-HF (NPN) RoHS Device Features -Halogen Free -Epitaxial planar die construction -As complementary type, the PNP transistor MMBT3904-HF is recommended 0.055(1.40) 0.047(1.20) SOT-23 0.118(3.00) 0.110(2.80) 3 1 Collector 3 0.079(2.00) 0.071(1.80) 0.041(1.05) 0.035(0.90) 2 0.006(0.15) 0.002(0.05) 0.100(2.55) 0.089(2.25) 1 Base 0.020(0.50) 0.012(0.30) 0.004(0.10) max 0.005(0.20) min 2 Emitter Dimensions in inches and (millimeter) Maximum Ratings(at TA=25 Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-Continuous Collector dissipation Thermal resistance, junction to ambient Storage temperature and junction temperature O C unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RJA TSTG, TJ O Min Typ Max 60 40 6 0.2 0.2 625 Unit V V V A W O C/W O -55 +150 C Electrical Characteristics (at TA=25 Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain C unless otherwise noted) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT td tr ts tf 300 35 35 200 50 100 60 0.3 0.95 V V Mhz nS nS nS nS REV:A Conditions IC =100A , IE=0 IC =1mA , IB=0 IE =100A , IC=0 VCB=60V , IE=0 VCE=30V , VBE(off)=3V VEB=5V , IC=0 VCE=1V , IC=10mA VCE=1V , IC=50mA Min 60 40 6 Max Unit V V V 0.1 50 0.1 400 A nA A Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time IC=50mA , IB=5mA IC=50mA , IB=5mA VCE=20V , IC=10mA f=100MHZ VCC=3.0V , VBE=-0.5V IC=10mA , IB1=1.0mA VCC=3.0V , IC=10mA IB1=IB2=1.0mA QW-HTR02 Page 1 Comchip Technology CO., LTD. General Purpose Transistor SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (MMBT3904-HF) Fig.1 Typical pulsed current gain V.S. Collector current 500 Fig.2 Collector-Emitter saturation voltage V.S. Collector current VCE(sat)- Collector-Emitter voltage(V) =10 hFE- Typical pulsed current gain VCE=5V 400 125C o o 0.15 300 o 125C 25Co 0.10 o 25C o 125C 200 100 0 0.1 1 10 100 oo -40C 125C 0.05 -40C o 0.1 1 10 100 Ic- Collector current (mA) Ic- Collector current (mA) Fig.3 Base-Emitter saturatioin voltage V.S. Collector current V B E (s at ) - B a s e -e m i tter v ota ge ( ) l V V BE ( ON )- B a se -e mi t te rv oltag e(V ) 1 VCE=5V Fig.4 Base-Emitter ON voltage V.S. Collector current 1 =10 oo -40C 125C 0.8 o o 25C 125C -40C o 0.8 0.6 oo 125C 125C 0.6 25C 125C o o 0.4 0.4 0.2 0.1 1 10 100 0.1 1 10 100 Ic - Collector current (mA) Ic - Collector current (mA) Fig.5 Collector-cutoff current V.S. Ambient temperature 500 Fig.6 Capacitance V.S. Reverse bias voltage 10 f=1.0MHz ICBO- Collector current (nA) 100 VCB=30V Capacitance (pF) 10 1 5 4 3 Cibo 2 Cobo 0.1 25 50 75 100 125 o 150 1 0.1 1 10 100 TA- Ambient temperature (C) Reverse bias voltage (V) REV:A QW-HTR02 Page 2 Comchip Technology CO., LTD. General Purpose Transistor SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B P A W C 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 3.10 0.10 0.122 0.004 B 2.85 0.10 0.112 0.004 C 1.40 0.10 0.055 0.004 d 1.55 0.10 0.061 0.004 D 178 1 7.008 0.04 D1 50.0 MIN. 1.969 MIN. D2 13.0 0.20 0.512 0.008 SOT-23 (mm) (inch) SYMBOL E 1.75 0.10 0.069 0.004 F 3.50 0.05 0.138 0.002 P 4.00 0.10 0.157 0.004 P0 4.00 0.10 0.157 0.004 P1 2.00 0.05 0.079 0.004 W 8.00 0.30 0.315 0.008 W1 14.4 MAX. 0.567 MAX. SOT-23 (mm) (inch) REV:A QW-HTR02 Page 3 Comchip Technology CO., LTD. General Purpose Transistor SMD Diodes Specialist Marking Code Park Number Marking Code 3 MMBT3904-HF 1AM 1AM 1 2 Suggested PAD Layout SOT-23 SIZE (mm) A B C D E 0.80 0.95 0.95 2.02 3.03 (inch) 0.031 D E A 0.037 0.037 0.080 B C 0.120 Standard Package Qty per Reel Case Type (Pcs) SOT-23 3000 Reel Size (inch) 7 REV:A QW-HTR02 Page 4 Comchip Technology CO., LTD. |
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